Noise-assisted mound coarsening in epitaxial growth
نویسندگان
چکیده
منابع مشابه
Mechanisms of mound coarsening in unstable epitaxial growth
Corner diffusion is shown to play a crucial role in determining the asymptotic mound coarsening exponent n in the case of unstable epitaxial growth on (001) and (111) surfaces. For the case of island-relaxation without corner diffusion the asymptotic exponent is found to satisfy n.1/4. However, when rapid cornerdiffusion is allowed, the coarsening exponent is found to approach 1/3. An explanati...
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We study unstable epitaxy on singular surfaces using continuum equations with a prescribed slope-dependent surface current. We derive scaling relations for the late stage of growth, where power law coarsening of the mound morphology is observed. For the lateral size of mounds we obtain ξ ∼ t1/z with z≥4. An analytic treatment within a self–consistent mean– field approximation predicts multiscal...
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We study a continuum model for epitaxial growth of thin films in which the slope of mound structure of film surface increases. This model is a diffusion equation for the surface height profile h which is assumed to satisfy the periodic boundary condition. The equation happens to possess a Lyapunov or “free energy” functional. This functional consists of the term |∆h|2 that represents the surfac...
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We study the joint effect of growth (material deposition from above) and nearest-neighbor interactions in a stochastically perturbed system of N line defects (steps) on a vicinal crystal in 1+1 dimensions. The noise stems from the depositionflux-induced asymmetric attachment of atoms to step edges. The steps interact entropically and as force dipoles. Our main result is a simplified formula for...
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Title of Thesis: SMALL FLUCTUATIONS IN EPITAXIAL GROWTH VIA CONSERVATIVE NOISE Paul Patrone, Masters Degree, 2012 Thesis directed by: Professor Dionisios Margetis Department of Math We study the combined effect of growth (material deposition from above) and nearest-neighbor entropic and force-dipole interactions in a stochastically perturbed system of N line defects (steps) on a vicinal crystal...
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ژورنال
عنوان ژورنال: The European Physical Journal B
سال: 1998
ISSN: 1434-6028
DOI: 10.1007/s100510050264